Question

esign an npn-based Inverting Amplifier with "diode-connected" (gate-to drain) n-channel MOSFET load to meet these performance specifications 200 Hz &fai 220 kHz Complete signal path mid-band gain Ami 20 dB Linear Vout Swing 21 Vp BJT (npr) → designer's choice, but the 2N3904 is a valid choice. MOSFET (n-channel) → ALDI 106 or ALDI 1 16 VEE =-5 V Vcc = +5 V -RB designer's choice (1% metal film MF) -RE, → designer's choice ( 190 MF) R2 → designer's choice (190 MF) RS 50 Ω (signal generator output resistance) Rz= 100 kD(1%MF) "CE → designer's choice (Re bypass cap, electrolytic? Tantalum?) Ci-designer's choice (input coupling cap, ceramic? Tantalum?) C2 → designer's choice (output coupling cap, ceramic? Tantalum?) C. 2N3904 Rr C.

Answer 1

Design an N based Inverting Amplifier given: f_low lessthanorequalto 200 HZ = 0.2 K HZ f_High greaterthanorequalto 20 KHZ BW: Bandwidth = f_H - f_L = 20 k - 0.2 k = 19.8 K HZ f_0 = center frequency = f_L + Bw/2 = 0.2 + 19.8/2 = 10.1 K HZ A_Mid greaterthanorequalto 20 dB C_1, C_2: coupling capacitor to DC Isolation C_E = By pass capacitor to decreasing voltage gain With large capacitance. reactance (X_c) at AC signal frequency (X_C = 1/wc) rightarrow Large capacitance = S/C (short circuit Small capacitor = o/c(open circuit C_2 will be /c V_out = I_DS R_L V_0 = I_DS times 100 K I_DS = 4.8/100 k = 0.048 mA MOSFET will Diode I_DS = I_G V_out = V_DS = V_DD - 0.7 = 5 - 0.7 = 4.8 P_VCC lessthanorequalto 10 Mw P_VCC = I_DS times R_L 10 Mw/100 k = I_DS V_Swing = V_max - V_min = 0.5 - (-0.5) = 1 V