4.5 The circuit of Fig. P4.5 is the CMOS counterpart of the bipolar version of Fig. 4.2, and its analysis follows a line of reasoning similar to Example 4.1. Let Mi have kn 400 μΑΛ72, V,,-1 .0 V, and λ,- 1/(25 V), and let M. have kp = 175 μΑ/V, V,,- -0.75 V. and λ,-1/(20 V). (a) If VpD5 V and the FETs are biased at 200 μΑ, estimate vomin) and vo(max), t and upper limits of the linear output swing (to simplify your calculations, assume λ,-X,-0 х» in this step) (b) Find Vs and Vsc so that the output node is biased right in the middle of the linear range. (c) Find the gain a -Vo/v (d) llow is V,, illecied il·Yu is lO1nV hishicrihan the value calculated in the example?
(e) What if Vsc is 10 mV higher than the calcu- lated value? If vi-Vim cos ω. estimate the maximum value of V for which the output is stll a relatively undistorted sinewave. Justify any approxima- tions vou may be making. V. SG4 4 S1 GSI FIGURE P4.5