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EXERCISES FUR SECTIOINITU 2-5 An engineer at a semiconductor company wants to model the relationship between the device HFE (v) and three parameters: Emitter-RS (x), Base-RS (2), and Emitter-to- Base RS (x3). The data are shown in the following table. E-BRS 7.000 3.375 HFE-İMSV Base-RS 226.00 220.00 217.40 220.006.375 Emitter-RS 128.40 14.620 15.630 14.620 15.000 14.500 15.250 16.120 15.130 15.500 15.130 15.500 16.120 15.130 15.630 15.380 14.380 15.500 14.250 14.500 14.620 52.62 113.90 226.50 224.10 220.50 223.50 217.60 228.50 230.20 226.50 226.60 225.60 229.70 234.00 230.00 224.30 240.50 223.70 6.000 7.625 6.000 3.375 6.125 5.000 6.625 5.750 3.750 6.125 5.375 5.875 8.875 4.000 8.000 10.870 7.375 98.01 139.90 102.60 48.14 109.60 82.68 112.60 97.52 59.06 111.80 89.09 101.00 171.90 66.80 157.10 208.40 133.40
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