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A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light

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