Question

alan NM - cases alan N os starting with a p-type si substrate doped with NA = 10 cm3, then the drain and Sovice Regions are doped with an additional No= 1019 cm3 a pmos Starting with n-type si substrate doped with No= 100 cm 3 than the drain and soone regions are doped with an additional NA=1019 cm3 (i) e Calculate the Conductivity of the drain and sources Regien for each case. use the figure as needed state any assumtions you made. (i) uangan adjust No to achieve a Conductivity of about 220rcm for case 9. Find No and expain your process. Note that un is not giun.

Answer 1

) A NO>>Hal in case of Hmoc) sebe " No is very large co o is very hrge compared to A r t we can neglect we in conductivity caluculations. conductinry > Jn = nalin No, a = 1.6x10-19 ln (determined formed at the Mobility of electros ullo crnav-S). til x 6 1979 C10.xllo :: 146 Common) piridos w > Both the source and drawn region of wraps will have some conductiune changin region of whops will have some - 19 -3 For P.lype , NA= 10 cm conductivity = Jp = Palpe P: NA 5 Mp = mobility of holms (dererwered from graph custo mong = 1019 cmtly !. Jp = 100 x 16 x 10 10x50 280 Cobm-cm) -l.

in conductinity aleo tniony is given, we need to final no (but this ! > 210 = Woli Hnxiaox 10-19 . => 1375 X10'9= Nonton I in therefore, product of the doping concentration and mobility should be 137,5x18t9 - we can condone from the graph that, of N ha 14x10 mobility of electron (ln) & 100 m /us: all the in their product is approximately same in Ciao It! Cep