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Q17 1) 2) An IGBT structure contains a parasitic thyristor. True False Q18 Q19 Ap A piece-wise linear characteristic curve co

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Answer #1

17)true

A major effort in the development of the IGBT has been towards prevention of the latch up of the Parasitic thyristor . This has been achieved by modifying the dopping level & physical geometry of the Body region. The modern IGBT is latch up proof for all practical purprose.

18)

False

Piecewise linear circuit contains linear characteristics Cuneni & voltage polacionship of inductor dt V2 = L dic 100v = 1x10 3 die die = 100 = 10 Option -3 =) 100 000 M/SOC fi = 501 2 Sinput froquency nipple frequency of full wave bridge poctifier = 2fi = 2x50 - 100H2 option -2

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