Question

3) AMOS Assume a mon I V. 2 V.V2V threshold voltage of 0.7 V. The transistor is in c Sammation ut off d. Not sufficient information since substrate and source are at different voltage levels None of the above 4) Choose the best answer regarding channel length modulation effect Results in lower drain current b. Increases absolute value of the threshold voltage thru body effect Depletion region effectively shortens the channel length d. Makes drain current depend on drain voltage in the saturation region Both cand d 5) Which statement is TRUE 2 An NMOS transistor when ON transmits logic 0 with degradation b. An NMOS transistor when ON transmits logic l with NO degradation C A PMOS transistor when ON transmits logic 0 with NO degradation d. Both a and b c. Both bands f None of the above 6) In a 90 nm technology a. The gate length is 45 nm b. The gate lengths of all transistors have to be NO more than 90 nm c. The minimum gate length is 90 nm d. 2. is 90 nm c. Both c and d 7) Choose the best statement. The fabrication process to create an n-well is 2 Spin on photoresist, grow SiO2, Expose photoresist thru mask, Strip off exposed photoresist, Strip off remaining photoresist, Ion implantation b. Grow SiO2, Spin on photoresist, Expose photoresist thru mask, Strip off exposed photoresist, Etch Oxide, Strip off remaining photoresist, Ion implantation c. Grow SiO2, Spin on photoresist, Expose photoresist thru mask, Strip off exposed photoresist, Strip off remaining photoresist, Boron ion implantation d. Grow SiO2, Spin on photoresist, Expose photoresist thru mask, Strip off exposed photoresist, Strip off remaining photoresist, Arsenic ion implantation

Answer 1

3) b. Saturation Mae Channel length u 5 e Depletic region effectively shortney t. None of the above a. The gate length is 4nm G 2 b. Growsiol, spin on pholinist, espole phobrelist through Mask, Ship off expored photorelists Etch olide ship off training phobrelit, in implantation

Answer 2

For N OS Source voltooge Vszletek Drain voltool Vo=2v Substrate vollge Vozov Gate voltage VG =2V Vith= 0.7 VD Z VG-Uth NMos is in Saturation 2 >2-007 (2013) Optione b) Saturation (Chorrel length modulo la (4) 1 Souce region effectively shortness the so depletion Channel length Id=1 en Cox (W) ( vas- uta)?(+1VDs) From this equation drain current depend on drain voltage in the saturation region. (option) e (Both c and d)

ProS Nimos is best for is best for transmiting logic 1 Transmiting logico option (e) Both bande (6) In a gonm technology minimum (option) (c) The gate length is goom A coption (a 'Ophion) (0) N-wer Grow sioz, spin on photoresist, Expose photo rent thou mask, strip off exposed photo resist, strip off remaining photo resist, Arsence in implantation, ( pentavalant) impurity