Question

1.30P)a) Plot the channel formation of p-channel MOS-FET for linear and saturation pinch-off regime (Kitabı referans alınız, final cevap anahtarından farklı olabilir). Explain how the channel changes with applied voltages. Show semiconductor structure, gate, drain, source and voltage polarities. b) Explain what happens if you apply voltages like i.Vg <<0, Vd<<0, Vs=0; ii. Vg <<0, Vd >0, Vs=0, iii. Vg>0, Vd <0, Vs=0 to ideal MOS-FET structure (g:gate, s:source, d:drain). Explain clearly by referring to MOSFET structure (burada kanal ile ilişkilendirin ve çizimlerinizde akım gerilim grafiğinin neresini çizdiğinizi gösterin, akım yönlerini gösteriniz). c) Plot the band diagram, approximate distributions of charge in the ideal MOS capacitor in depletion and accumulation for the p-channel case.

Answer 1

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