Question

a) List any five process and design parameters which effect the magnitude of Ips. b) Calculate gain factor (Rp) of the PMOS transistor given the following conditions: cm2 Up = 200 E = 3.9 €. tox = 10nm V-sec W = 7.5 um L = 2.5 um What is the value of Ids for this p-channel device given Vr = -0.5V, VGS -3.3V and Vos = -2.0V =

Answer 1

(0) 5 thie росек олио Хелзи рокішеkеux which elect magnitude of Drain Current i.e. Io. We know that to is given by following formula. І. - 1 и Cox o (as - v4)* (1+A Vbs) Mobility. Is depends on ш. 26 и, is avви, клеи 1, илоде. mobility of e- lelectuou) is greater than mobility of wles. 2 L. о Vь slecose е Cox → Oxide copacitauce Gox tox » Oxiole u olsueX8. fox In depends ou coox of cox increases, then ID lucreases. о о W → channel width. ID depends on channel width y channel wiol the hueleases, In luceeases. L - clkaиие Сека. дереиols ou clhouef lеша Ж. i cuquuel leugth modulatiou palcamelele. 1, depends oи A. 6 4:0, Reu X, iuckeasex, о о Vers ? Gate to source voltage. 6 Vas_muсh аkеѕt gel Кои Мt, To iaokeasuk .

(0-) Graku Facbon (Bp) is given by following form celo аше Сох и ой Given 200 см2 цехЄox x и tox L € 3-5 60 V-see : 3.9x 8:85xo F/сш. -13 3. 45x to Flem tox = lo um = 10x10 W -9 охоктоб см, 106 см, = 7, S иш L= 2. Ѕиш , а 2 во 2 Mpx 66x x tox L a gоо х 3.45x to's x 7,5- 2: S = 200 х 3.45x16''хto° x3. Па = (x 3: 45x to Bp. 20.70 x 165 А/v2 , -13 х10 8

(C) Gulveu → Vg E -OSV VAS -3.3 V Vos -2:0v. To find Drain Current. Fole fluoltug pucuku cucurioulo flust we love to find regloe' of Operation. For tweale Triode Regrou >> VDs > Vas-Vo. (All takeu iu maguitude) For saluration: Region & Vas-ve. Nost: VGs - V7 = 3.3-0.5 = 2.8v. Nos 2v L Vos < VGS - Vt » Satulation Regiou. Io = 1 elp Cox W ("SG-191) 2. : 1 x 20.70 x 105 5 (3:3 – 0.52. I ap cox w p Cox w calculated in part (6)] Ex 20.70 x165x (21892,- 2 2 - 1x 20.70x105 x 7.84 2 - 3.92* 20,70 x165 Ip = 81.144 x 155 A -2 MA I = 81.144x10 ID 0.811 WA

All the parts have been solved with proper explanation.