i have 3 question for solid state physics 1) what is meant when we say a...
i have 3 question for solid state physics
1) what is meant when we say a P-N junction is "rectifying"?
2)why is the mobility of an electron greater than the mobility of a
hole?
3)why does forward bias in a P-N junction reduce barrier
height
Homework Answers
P-N JUNCTION CONVERTS ALTERNATING CURRENT INT0 DIRECT CURRENT SO IT IS CALLED RECTIFYING.
In forward bias applied voltage is opposite to barrier voltage so barrier height decreases.
Conduction electrons(free-electrons)travel in conduction band and valence electrons(holes) travel in the valence band.In an applied electric field,valence electrons cannot move freely as the free electrons because their movement is restricted.
The effective mass of holes slightly greater than eletrons and mobility is inversly propotional to mass .
Holes are strongly bonded by nucleus and electrons are free. So mobility of electrons more than holes.
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i have 3 question for solid state physics
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Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...
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Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above....
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Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...
Thanks....
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