Question

2. True or false: a. Schottky barrier diodes typically have lower leakage current than p-n junction diodes b. The semiconductor drift current is proportional to the magnitude of the electric field. c. The ideal subthreshold slope for a MOSFET increases with increasing temperature d. For a MOSFET the density of inversion-layer charge is QinrsonCx VGS VFB e. For a MOSFET the following equation is correct: on inversion -Raccumulation VGS-VFB f. For a BJT the following equation is correct: -- 1-a IB Short answer: f. For a bipolar junction transistor, why does the collector current for constant VBe increase with increasing VcE as shown at right? DE CE E-B space charge region B-C space charge region Collecor g. Write an equation for the maximum value of the minority carrier concentration in the base of the BJT shown at right. E-fiekl Base h. What mode is the BJT shown at right operating in? i. What mode is the BJT shown at right operating in? PAI j. For the BJT of part i, is the emitter biased positive or negative with respect to the base? k. What is the driving force for current flow for a MOSFET in the subthreshold region of operation?

Answer 1