Question

2. (20 pts) - A Silicon sample doped n-type with Nd = 5x10 cm has an ideal Schottky barrier formed on its surface. The Silicon electron affinity is 4.0 eV, and the Silicon bandgap is 1.1 eV. The metal work function is 4.7 eV. Draw the equilibrium band diagram and for the reverse bias diagram with Vr = 3 V. In each diagram show the numerical values for OB, Vo , (Vo + Vr), EFs - Ej, Ec-EFs, and qVr

Answer 1

solution:

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Answer. A schottky barrier junction forms When a metal and Semicondutor junction forms. In our case, the semiconductor iq n-type With No=5x10's cm 3. The energy band diagram of schottky junction is shown below. - ~ - - - A- - 7 - Ers ETI metal -------- EFE & depletion region

Here, 996 = 90u-x -4.70V -4.00V =0.7eV Fermi level with respect to intrinsic fermi level is given by Ef-Ep = Kiln (1) (sxio's = 0.026 ln (1.45X1010) s kr=0.02ber Ini - 1.45x100 m 3 Efs Ei = 0.33ler As bandgap is given asli lev from the figure we can write that Eca Efs=0.55-0.33leV osset 10.33ler EC-Efs = 0.22ev Ei *--*---- Ev Also - W ossen - que = 9.00 = 2000 (EC-Ers) -0.7ev -0.220V =10.4801

Now, applying a reverse bias voltage of Wp = 34 eam - - - - D- - - age q10-V - - - Ec Efs Lorraarai As reverse bias voltage 98 3V Thus, qur=3ev 2616+ Vr)=048eV +3eV =/3.480V

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