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Hi everyone, I have a problem about semiconductor.

Please help me with it,thanks a lot.

Background:

Physical Constants: Vacuum permittivity: £o = 8.85 x 10-14 F/cm Plancks constant: h=6.63 x 10-34 J-s Speed of light: c= 3.0

GaAs material parameters: Band gap energy at 300 K: Eg = 1.42 eV Relative permittivity: ε = 13.1 Effective mass: m = 0.068m m

Question:

Use this information to answer Question 4-6: Below is the capacitance-voltage curve measured for a Schottky contact made on n

What is the built-in potential, 6,, in unit of V? Answers within 5% error will be considered correct. Enter answer here Calcu

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Answer #1

Hi there,
Please find the answer attached as under. Please give a Thumbs UP if you find the answer useful. Have a rocking day Ahead:)

Schottky doodle Let w = Lepleliem ewidth in N Type Semiconductor I IN-type het g = c (Capacitane per unit area) where I = Vbi

Ź - 2CVbi Bva) EQINO 2x105 - 3 . At - Mi 54=0 a) : Built in voltage = Vbi 70.9v 2 6) Also at. Va=0 » 1 = 2Vbi 6 0.9 12 qano

> N, = 2x0.9 1.789-85X1of4x 1.641043xr015 53-622x105 cm? 2 bassier height (fon) - quoi = qon- (EC-EF) quum = uden- (EG (Ef-Ei

ne o.gex = apm - (1:12 KT ln No) 10.9 = Volon - (1 . zaxofen (263 km)). 019 - 996m.- (0.56 -0.322) * Bon = 1.135ev hon = 138

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