1)For an electron in GaAs with
an effective mass of 0.067 m0 , we find λdeB ≈ 42 nm at 300 K. In
order to observe quantum confinement effects at room temperature
for this material how thick should the structures be?
2)As an example, we consider a typical GaAs/Al0.3Ga0.7As QW with d = 10 nm. The confinement energy is 245 meV for the electrons and 125 meV for the holes. Determine E1 and E2 for electrons and holes in (a) Infinite Well model; (b) Finite Well model.
(1) The energy of the electron is,

The energy in the infinite well is given by,

Now to observe quantum confinement effects the energy in infinite well should be equal to the energy of the electron (Let us take n = 1), then we can calculate the thickness required as,



Hence the thickness of the structure should be in order of 4.34 Angstroms, so as to see quantum confinement effects.
1)For an electron in GaAs with an effective mass of 0.067 m0 , we find λdeB ...
Special Problem (20 pts) Consider an undoped AljGa7As/GaAs/ Al3Ga7As quantum well (QW) of width W-15 nm. (a) Due the quantum mechanical confinement in the quantum well, the lowest energy states of in the conduction band is no longer the conduction band edge, but the CB edge plus the confined state energy (particle in the box problem), where the confinement energy relative to the CB edge is given by the solutions for infinite barriers where n-1,2,.is the quantum number, n-1 is...