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What is the purpose of the lightly doped (drift) n regi Why is the drift region n instead of p or int Why is &r the critical breakdown field, larger in GaN than in Si? In a power diode, why is the specific on-resistanc actual resistance of the n drift region? Why is the turn-off transient time larger in a pin diode than in a Schottky diode? on in a power diode? rins e quoted rather than the

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fhe aapie tion widt, so the bheakdom vettyt incaxs So it Can handte volasen elctro aiddt due So, in than Schotthy diodes beca n pzN diode lao lw nw.nle g chovura o udoved in. İ.thinntauyion

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