Q #1 Solve for the gain A-Vo2/Va, if V.-1V, Kn_HnCox = 0.4mA/V, VDD = 12V,-Vss--12V, (W/L)t®...
For:
VDD=VSS=1.5 V
Vt=0.6V
L= 1 um;
w3= 40um, w4= 30um;
Iref= 10 uA, I2= 80 uA, i4= 60uA, VD max (for Q4)=1.3V
VD min (for Q2)= -1.3 V
Find: R
Find the increase in Io if VD (for Q2) was increased
by 0.5 V. (VA = 20V)
SG4 2 REF ei GSI
SG4 2 REF ei GSI
VDD = 0.9 V Q4 W/L 0.5W/L 0.5W/L Q5 Vout W/L W/L Q1 Q2 CL 2W/L 2W/L 2W/L 06 Q7 Q8 VSS=-0.9 V ?=0.1 V-1 V,,-0.25 V ?.cox= ?.cox= 200?AN'
Solve: For the circuit below, using a 2N7000 N-Channel MOSFET, VDD Of 20 V, V 1V and (kn'w/L)- 100umohs, calculate Vo, Vo and Vs and lo. Then, set an input signal Vin 25mV peak amplitude with a frequency of 1kHz. Calculate the voltage gain (Von/Vn) + VDD RG1 V 390 kn RD VRD 堲 C. C1 M1 IG=01- 10μ5 2N7000/PLP 2N7000/PLPRLoad VGS V, GS RS 15F 0.47k CS RS CS DC measurements: Calculated AC measurements: A VV Calculated
For Fig. 9.55, determine voltage gain. The given
specifications are, (W/L)1,2 =40, (W/L)3,4 = 50,
ID1=ID2=ID3=ID4=0.6mA, ~
NO88 Ap 0.14 V-1 0.6 mA, 100μΑ/V μpCox 50 μΑ/V2, PnCor VIA VDD 12.e gi Toar.e V bns Vo2EM4 , 19tiln Vb2 M3 ontba o crco ROp Vout RON VD1HM2 ovides dc bias current altue of Vaa hat gives Vin ndyoltage gain Figure 9.55
NO88 Ap 0.14 V-1 0.6 mA, 100μΑ/V μpCox 50 μΑ/V2, PnCor VIA VDD 12.e gi Toar.e V bns Vo2EM4...
Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) = 1 mA/V2. For each circuit find the operating mode (cutoff, triode, or saturation) and values for VG, ID, VD, and Vs 수+9. 1. 2K 1. 2K 470K 47GK LK 1K
Q5: Consider the following Multistage amplifier with kn' = 160 uA/V?, kp' = 40 A/V, and Vtn=0.7 V, Vtp=-0.8 V. All the transistors operate at IREF = 90 A , VoV=0.3 V, VA| = 10V for all devices VDD - VSS - 2.5V (Note ID1 = ID2 = ID3 = ID4 = ID5/2 =4541A) and ID5 = ID = ID8 =ID6= Iref (a) Identify the different stages of the amplifiers (b) Design the circuit i.e. find W/L of all transistors...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
- 1. For the MOSFET amplifier, given Vpp = 5V, -VSS=-5V, Rsig = 1Kohm, =K',(W/L)= 0.8 mA/V2, Ven= 1.1V, 1 = 0, Q point (0.5mA, 5V). a. Draw small signal equivalent circuit b. To get the Q point, determine values of Rp. and RG c. Find input impedance Rin = _ and output impedance Rout=__ d. Determine the g11 = and g22 for the amplifier e. Find the voltage gain Av=vo/Vsig=_ --
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1
mA/V^2. Find the operating mode (cutoff, triode, or saturation) and
values for Vg, Id, Vd, and Vs.
49v Up Va (K
Ci-00 o Vo Qi RL-10k2 6 5 V Figure 2. I-500 μΑ, ka'(W/L)-1 mA/V2, IVI î.5V, VA-75V For the circuit shown in Figure 2: a) Find VD, Va, and Vas b) Draw a small signal equivalent circuit and find the model parameter values. c) Find the input and output resistances of the circuit. d) Find the open circuit voltage gain for the amplifier and the loaded voltage gain.