Question

a) How is it possible to fabricate both nMOS and pMOS devices on a single substrate?

b) The figure below shows the circuit of a simple cMOS inverter. Initially VIn is set to 0 volts, explain what happens to the 2 transistors and the voltage at "Out" as the voltage pn VIn is increased.

M2 PMOS Out Vdd Vi M1 NMOS

Answer 1

LP) При Lnwell [pt) Int! [nt] LP substrate x 11) Thick field onide It is formed in all regions except the terminals of Pros and Nmos xiii) Metallisation - Aluminium es sputtered on the wole wafer mi B u Thick oxide A ntikman pel pe intl n well TP-substrate xiv) Terminals. The terminals respective gaps are taken out fran

vout Ip-deeptrode Ip- tride N-off N- Saturation V DD SUDD tutel PMOS both saturation INMOS NDO - UTN e. Saturan IN-Triode N-Deep triode ap- off O VIN NDO-Uppl UDO
as long as vin is increased effect is explained and also shown by graph.and also for frst qsn the mentioned process in n well fabrication although the famous one is twin tub process only.