2. A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative recombination...

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2. A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative recombination...

2. A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative recombination times of 25 and 90 ns, respectively. The drive current is 35 mA

(a) Find the internal quantum efficiency and the internal power level.

(b) If the refractive index of the light source material is n =3.5, find the power emitted from the device

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Answer 1

Answer #1

i just refer from textbook for transmission factor ,

If you have transmission factor and refractive index of medium ,you can substitute at that variables at power emitted from the device

If you have doubt at any step please comment below

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Answer 2

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Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is...

Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, so...

2. A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative recombination...

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Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is...

Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, so...

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2. A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative recombination...