Acceptor impurity of concentration 10^{14} cm^{–3} is added to a pure silicon sample. Which of the following correctly shows the hole concentration (in cm^{–3}) at thermal equilibrium, at 500 K? Assume ?_{i} = 1.45 x 10^{10} cm^{–3} at 300 K and neglect the temperature dependence of the band gap.
solution:
please give me like..its help me to write more questions..thank you..
Acceptor impurity of concentration 1014 cm–3 is added to a pure silicon sample. Which of the...
Consider silicon at a temperature of 300 [K], and a donor concentration ND = 4·1015 [cm-3]. The thermal equilibrium recombination rate is RP0=1·1011 [cm-3 s-1 ]. A uniform generation rate by illumination produces an excess-carrier concentration of on δn= δp=1·1014 [cm-3 ]. Note that at a temperature of 300 [K], the commonly accepted value for the intrinsic carrier concentration of silicon is ni = 1.5·1010 [cm-3] A) By what factor does the total recombination rate RP increase under illumination with respect to thermal equilibrium, RP/RP0 ?
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped. Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped. Silicon at at T-300 K...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
Consider silicon at a temperature of 300 K], and a donor concentration Np = 4-1015 [cm31. The thermal equilibrium recombination rate is RD01-101l [cm3 s1. A uniform generation rate by illumination produces an excess-carrier concentration of on Sp 1-1014 [cm31. Note that at a temperature of 300 [K], the commonly accepted value for the intrinsic carrier concentration of silicon is ni = 1.5 - 1010 [cm31 A) By what factor does the total recombination rate R2 increase under illumination with...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Semiconductor Physics: A semiconductor has a intrinsic concentration of 1010 cm-3 and has donor impurity concentration of 1015 cm-3. Light is shined (uniformly) upon the sample generating 5*1019 electron-hole pairs.cm-3s-1 with a minority carrier lifetime of 10-6 s. What is the net electron-hole recombination rate? I think at steady state, the electron-hole recombination rate is the same as the generation rate. But the current circumstances of the question make me doubt that assumption or conclusion (the question is 4 marks).
A sample of Ge is doped to the extent of 1014 cm-3 donor atoms and 7 x 10 13 cm-3 acceptor atoms. At the temperature of the sample, the resistivity of intrinsic Ge is 60 ohm-cm. If the applied electric field is 2 V cm-1, find the total conduction current density. Assume electron and hole mobilities of 3800 and 1800 cm2 V-1s-1, respectively.
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...