BJT Theoretical: - What are the three modes of the operation of BJTs ? How to...
BJT Theoretical:
- What are the three modes of the operation of BJTs ? How to force a BJT to operate in each of the three modes of operation ?
- Use iC ∼ vBE to identify the region where BJTs operate in (i) cut-off mode and (ii) active mode.
- Show the large-signal equivalent circuit of a BJT biased in active mode.
- The base current of a BJT consists of two distinct components, what are they ?
- What is base-width modulation ? How to quantify the impact of base-width modulation mathematically ?
- The base and emitter resistances of a BJT are physical resistances whereas the output resistance of the BJT is an artificial parameter used to depict the behavior of the BJT, why ?
Homework Answers
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BJT Theoretical:
- What are the three modes of the operation of BJTs ? How to...
Given Beta=100. c. What region of operation is the BJT operating in? How do you know?...
Given Beta=100.
c. What region of operation is the BJT operating in? How do you
know?
Hint: compare the voltages at the Base, Collector, and
Emitter.
d. Calculate theoretical calculations for VB, VC, VE, IB, IC, and
IE
V1 12E R4 470k R1 22k 01 Qbreakn R3 270k R2 16k 0
I keep getting the wrong answer from everyone else pls help me get the right answer For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak si...
I keep getting the wrong answer from everyone else pls help me
get the right answer
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc-9V, Vee--7V, Vb-1.2V, and Re -9.9k2. Assume that to keep the transistor in the forward-active region, the base-collector junction cannot be forward biased. Use B 20 and Vbe(on) 0.7V. Neglect the effects of base-width modulation. Vcc...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
b) Assuming active region operation, determine vo in tems of v, R,RE, and the BIT parameter P 426 of 1009 What is...
b) Assuming active region operation, determine vo in tems of v, R,RE, and the BIT parameter P 426 of 1009 What is the vake of 10) when ßRε R,? c) d) Gmpute the value ofro given that ar-3V,R,-10k and Vs-10 v RE-100ka,β-100, eDetermine the range of values of y for which the BIT operates in its active region for the parameter values given in (d). What is the corresponding range oo PROBLEM 7.19 Consider the compound three-terminal deviceormed byn FIGURE...
WA R3 W Consider the above circuit with indicated parameters and Rs.83.50, R1=20k0, R2=2020, RE1=428.30, RE2-5000,...
WA R3 W Consider the above circuit with indicated parameters and Rs.83.50, R1=20k0, R2=2020, RE1=428.30, RE2-5000, RC=10, RL=5.0kg, B=39, VBE=0.8V, IVAL= 36 V and VT=20mv. For the following questions, do not do your own DC calculations - assume a hypothetical value for IC=4mA. (a) Calculate the input impedance of the amplifier, Ri. Answer: (b) Find the voltage gain vi/vs Answer: (c) Find the voltage gain vo/vi Answer: (b) Find the voltage gain vi/vs Answer: (c) Find the voltage gain vo/vi...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteris...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
Given Beta=100.
c. What region of operation is the BJT operating in? How do you
know?
Hint: compare the voltages at the Base, Collector, and
Emitter.
d. Calculate theoretical calculations for VB, VC, VE, IB, IC, and
IE
V1 12E R4 470k R1 22k 01 Qbreakn R3 270k R2 16k 0
I keep getting the wrong answer from everyone else pls help me
get the right answer
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc-9V, Vee--7V, Vb-1.2V, and Re -9.9k2. Assume that to keep the transistor in the forward-active region, the base-collector junction cannot be forward biased. Use B 20 and Vbe(on) 0.7V. Neglect the effects of base-width modulation. Vcc...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
b) Assuming active region operation, determine vo in tems of v, R,RE, and the BIT parameter P 426 of 1009 What is the vake of 10) when ßRε R,? c) d) Gmpute the value ofro given that ar-3V,R,-10k and Vs-10 v RE-100ka,β-100, eDetermine the range of values of y for which the BIT operates in its active region for the parameter values given in (d). What is the corresponding range oo PROBLEM 7.19 Consider the compound three-terminal deviceormed byn FIGURE...
WA R3 W Consider the above circuit with indicated parameters and Rs.83.50, R1=20k0, R2=2020, RE1=428.30, RE2-5000, RC=10, RL=5.0kg, B=39, VBE=0.8V, IVAL= 36 V and VT=20mv. For the following questions, do not do your own DC calculations - assume a hypothetical value for IC=4mA. (a) Calculate the input impedance of the amplifier, Ri. Answer: (b) Find the voltage gain vi/vs Answer: (c) Find the voltage gain vo/vi Answer: (b) Find the voltage gain vi/vs Answer: (c) Find the voltage gain vo/vi...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
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