Question

Problem 5
A semiconductor is to be made by depositing a thin layer of As on a Si single crystal. The coated wafer is
then to be heated to permit the As to diffuse into the Si. For production reasons, it is desirable to deposit
no more than 1.7 x 10^18 atoms/cm2(b0C) and to anneal at a temperature of 1230°C or less. The designers
have specified that the As concentration must be 1 atomic part per million at a depth of 10 μm. You have
been asked to compute the shortest possible annealing time.
Notes: DAs in Si = 0.32 exp ((-82000 cal/mole)/RT) cm2/s
Si: atomic mass 28; density 2.33 g/cm3
The time cannot be obtained by a closed-form solution.

Answer 1

Answer:

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