Question

Please answer the following true/false questions related to the properties of semiconductor materials and p-n junctions and briefly explain your reasoning

(a) Under thermal equilibrium, in an energy-band diagram, the available states above the Fermi level are mostly unoccupied. [T/F]

(b) Germanium (Ge), another Group-IV elemental semiconductor with a bandgap energy of 0.67 eV, has a lower intrinsic carrier concentration (ni) when compared to silicon (Si). (Please assume that Ge and Si have the same NC and NV values) [T/F] (

c) The resistivity of a semiconductor is inversely proportional to its carrier (electron and hole) drift velocities. [T/F]

(d) In MOS transistor structures, due to the device scaling, the carrier mobility values are typically higher than the bulk mobilities. [T/F]

(e) The Fermi level throughout the length of a p-n junction remains flat/constant only under thermal equilibrium (zero bias). [T/F]

(f) Built-in potential of a p-n junction diode is independent from the device operation temperature. [T/F]

(g) The unit-area junction capacitance of a reverse-biased p-n junction increases as the depletion layer width narrows. [T/F]

(h) The junction capacitance and depletion layer width of a p-n diode are both inversely proportional to the doping concentration of the lightly doped region. [T/F]

(i) When a p-n junction diode is under forward bias at room temperature, the Fermi-level remains constant along the junction. [T/F]

(j) In a heavily p-type doped one-sided p+-n junction, the depletion region mainly establishes within the lightly doped n-side of the junction. [T/F]

Answer 1