Question

Answer the following questions: a) From the so-called "on-current", 1D (Vos-VppVDSDDV, estimate the average velocity of electrons in the channel at the source end of the channel. (Note: You will need to correct for the effect of the series resistance as discussed in HW12.) 1b) From the linear region of operation, estimate the effective mobility of this MOSFET 4 Measured IV data for an n-channel MOSFET are shown below. for this MOSFET are: Relevant parameters T- 300 K oxide thickness: x。= 2.2 nm Relative dielectric constant Ko-4 Power supply voltage: VDD=1.2V Series resistances: Rs-R,-100Ω-m Actual channel length 85 nm Assume that the MOSFET is 1 micrometer wide, W 10 cm 10N-1 1 20 (μ A/μ m) GS 0.2 0.4 0.6 0.8 1 Vos (V) 1.2 1200 1000 800 high VD 600 400 0.8 0.6 Gs (V) r,s,-0.26(V) has = 0.28(r)

Answer 1

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