Question

Estimate the current gain limited by injection efficiency, βo, the common-emitter current gain limited by the recombination in the base, βR, and the overall current gain, β, for the following parameter values, typical for Si pnp BJTs: NAe = 1.7 e19 cm^-3, NDb = 4.9 e17 cm^-3, mun = 900 cm^2/Vs, mup = 300 cm^2/Vs, W = 0.11 um, Ln = 10 um, Lp = 7 um.

Hint: The diffusion coefficient and the mobility are related via the Einstein's formula: D = mu*(kT/q)

a) The current gain limited by injection efficiency, βo.

c) The overall current gain, β.

Answer 1

r eCom lbin utrent gain 6.11x10-67 ㄴ AR Ll on チ·3 во 1051-329

over all Current ain -t βο 8oBr BoBe 8.09x103x105. t-229 こ 드 8,687