Question

3. A metal film (αν 64* 10-6 per degree Kjis deposited on silicon 27* 10-6 (av per degree K) and heated to 120 °C. Calculate the stress generated in the film ν's, ). when cooled to 30 °C. What will be the stress in the substrate. (given α are the volume expansion coefficient and that E (Poisson's ratio for Al = 0.4). 2.3* 1012 dyn/cm2

Answer 1

o,"İr ir diHS) doesn't ma hen AmT → 1, 8839 x 10.1. dyn (cme