Question

Problem 7 T (C) 12001000 900800 700 T(C) 800 700 \· 10 1000 600 H2O (105 Pa) E, -2.05 eV 100 Wet oxidation HO (I0 P) (U11)S (100) S 10-1 E. 071 ev 10-2 i Dry 0,005 Pa) E-20 ev Dry oxidation (105 Pa) (100) S 10-3 い1.24 eV 10-H 10-4 0.6 07 08 0.9 10 0.7 0.8 0.9 10 1 12 1000/T (K-1 1000 / TK-1) A thermal oxide of thickness 150 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1050 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of 650 nm. Calculate the time taken to obtain the additional thickness

Answer 1

= lose t2-13 ,-13 2.3 k T 1323 k KT 112 exp 12

DAS E 0.15S 0108910 0159) Tme tat fo dhonel iurt orlaon 6 So n hinat Finat

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