Question

HELP with finding 8 and 9

2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one answer) (A) V increases as temperature increases (B) Is increases as temperature increases C) V decreases as temperature increases (D) Is decreases as temperature increases EB EB (b) (5 pts) Figure 1(b) shows the key part of an IC temperature sensor consisting of two identical PNP BJTs biased at different collector currents with a current ratio of m. Currents m I and I are injected into Q1 and Q2 to develop voltages VEB1 and VEB2, respectively. Known that the op-amp has a gain of G and zero input-offset voltage. Derive Vout as a function of temperature, independent of Ic and I.9 V) V, out Figure 1

Answer 1

3 mi Hente when Ternp tac So Ves decreases as tempexature ncreases C is corect 20

KT 2 hm.T KT 2