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1. An MOS -C is maintained at T= 300 K, to^-0.1um, and the Si doping is ND 105 cm3. Compute (a) in volts, (b) depletion width

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iven that T- 300K Lo O um Ko = 3-9, Es = 1l-8 KT fux ND -ET In s-0. 2982 V 2ksEa -2ND 2982 (18)(a-r)(+(0. Deplution o.7Semiconduetor electric field Es - (1-6810)(w) (0- Ta x) (h91X5a3) (8-l1 ko

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1. An MOS -C is maintained at T= 300 K, to^-0.1um, and the Si doping is ND 105 cm3. Compute (a) in volts, (b) depletion...
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