Question

Please write a clear and direct answer, no need for further explanations
The course name is Nanomaterials

4 (15 pt) As you learned from the Professor Samuelson's research in this class, we can measure the electron transport in (InAs/InP/InAs/InP/ ) semiconductor nanowire along with its longitudinal direction. One of the components with a higher energy band gap acts as a barrier layer for the electron transport. Consider the experimental data for the electron single superlattice structured a transport. Temperature (C) I (A) 9.1383x109 39.5 4.6588x10 60.3 84.1 2.3967x107 Calculate the barrier height in eV, corresponding to the threshold voltage, for the electron transport along the nanowire. (Boltzman constant: k-8.617x10 eV/K).

Answer 1

ampde theary to ACCOY di -pm pahning thery By femi-leel EN Barrier height Cotre ponds to YOltage thiehold KET volts VT in electron voltit it (ET) ev VIE

Yor T 29.5 VT KeT 8.617X1O x(29.5t212 0.02692 ev VT TE 60.3.C tor 60-31272) eV VT8.613 X10x OO2872 ev VIE 84.1.C for T 10 5 84.1)t 233ev VT8617 X VT