CHAPTER 12 PROBLEM INFORMATION TABLE | ||||
Problem | Complete After | Difficulty Level | Suggested Point Weighting | Short Description |
12.1 | 12.3 | 1 | 10(1 each part) | Quick quiz |
12.2 | 12.1.1 | 2-3 | 8 | Derive common base circuit |
12.3 | 12.1.2 | 1 | 5 | Determine gm, rv |
12.4 | ” | 3 | 8 | Confirm Eqs. (12.10) |
• 12.5 | “ | 4 | 20 | Calculate H-Pi parameters |
* 12.6 | “ | 4 | 20 (a-14, b-6) | Derive/compute /T |
12.7 | 12.2.2 | 3-4 | 10 | E-B diffusion capacitance |
12.8 | 12.2.3 | 2 | 5 | Estimate /ccti/'^bbtb |
• 12.9 | “ | 2 | 8 (4 each part) | t, and isd plots |
* 12.10 | 12.2.4 | 3 | 10 (a-6, b-4) | tf derivation and plot |
Quick Quiz
Answer the following questions as concisely as possible.
(a) In words, what is the quasistatic assumption? How is the assumption utilized in the derivation of the generalized two-port model?
(b) Why are there separate definitions for the npn and pnp gij conductances?
(c) What is the origin of the "Hybrid-Pi" name?
(d) State the names of the following Hybrid-Pi parameters: gm, r0, rπ, and rµ.
(e) What is the justification for adding capacitors to the low-frequency Hybrid-Pi model to obtain the high-frequency model?
(f) Describe what happens to iB, ic, and the minority-carrier concentration in the quasi- neutral base once the transistor enters the saturation mode during the turn-on transient.
(g) Give both the word and mathematical definitions of the "base transit time."
(h) How are τB and τt related to βdc?
(i) Why does an iB<0 (ξ > 0) during the turn-off transient give rise to a reduction in both the storage-delay and fall times?
(j) What is a Schottky diode clamp, and what purpose does it serve?
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