CHAPTER 14 PROBLEM INFORMATION TABLE | ||||
Problem | Complete After | Difficulty Level | Suggested Point Weighting | Short Description |
14.1 | 14.4 | 1 | 10(1 each part) | Quick quiz |
14.2 | 14.1 | 2 | 10 (5 each part)/comb. | Draw/use band diagram |
14.3 | 14.2.1 | 2 | 8 (2 each part) | Parameter computation |
• 14.4 | “ | 2 | 8 | W versus ND plot |
• 14.5 | “ | 4 | 30 (a-18, b-8, c-4) | Autodraw band diagram |
14.6 | 14.2.2 | 2 | 8 | Confirm Eq. (14.18) |
14.7 | “ | 2-3 | 15 (a-4, b-5, c-4, d-2) | MS photodiode |
• 14.8 | “ | 1 | 8 | Effect of Rs on I-V |
14.9 | “ | 2 | 8 | Injection ratio |
• 14.10 | “ | 3 | 15 (a-10, b-4, c-1) | Schottky barrier lowering |
• 14.11 | 14.2.3 | 2 | 12 | C-Vdata analysis |
14.12 | “ | 4 | 20 (a-12, b-6, c-2) | Linearly graded MS diode |
Quick Quiz
(a) What are the differences between an MS diode, a Schottky diode, and a hot carrier diode?
(b) An ideal MS contact is formed between a metal and a semiconductor with ɸM = x. Under what conditions will the contact be ohmic-like, and under what conditions willthe contact be rectifying?
(c) The solutions for the electrostatic variables p,
,and Von the lightly doped side of a p+ -n or n+ -p junction diode and inside the semiconductor of a comparably doped MS diode are all but identical. Are there any significant differences in the electrostatic formulations?
(d) Name the dominant current component in MS diodes .
(e) Somehow the
component of the current in an MS(n-type) diode was determined without a detailed mathematical analysis of electron injection from the metal into the semiconductor. How was this accomplished?
(f) Explain why MS diodes do not exhibit a diffusion capacitance or diffusion conductance.
(g) Explain why MS diodes switch very rapidly from the forward-bias on-state to the reverse-bias off-state.
(h) What is a "Schottky diode clamp"?
(i) Describe the usual procedure followed in forming practical ohmic contacts.
(j) What is "spiking"?
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