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(a) Define the responsivity p and quantum efficiency n of a photo-detector and show that they...
2. A digital optical fiber link employing ideal binary signaling at a rate of 50 Mbps operates at a wavelength of 1.3 um. The detector is a germanium photodiode which has a quantum efficiency of...
2. A digital optical fiber link employing ideal binary signaling at a rate of 50 Mbps operates at a wavelength of 1.3 um. The detector is a germanium photodiode which has a quantum efficiency of 45% at this wavelength. An alarm is activated at the receiver when the bit error rate drops below 10. Calculate the theoretical minimum optical power required at the photodiode in order to keep the alarm inactivated. Comment briefly on the reasons why in practice the...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency of 60 % at a wavelength of 0.9 um The dark current is 3 nA and load resistance is 4 Kn. The incident optical power is 200 nw and the receiver bandwidth is 5 MHz. Determine 1) Mean square quantum noise current, 2) Mean square dark current and 3) Mean square thermal nosie current at a temperature of 20 °C [8]
Q.14 a) i...
Applied quantum mechanics 1. Calculate the carrier concentrations (p and n) for Si at 300k for...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
Quantum Physics - Photoelectric Effect 1 Light Light2 Photo- electrons KEL KEN-W Photoelectric Effect Lenard found...
Quantum Physics - Photoelectric Effect 1 Light Light2 Photo- electrons KEL KEN-W Photoelectric Effect Lenard found that light has to be above a certain frequency in order to observe photoelectrons The Planck constant is 6.626x10^-34 J s. The calcium metal has a work function WO = 2.71 eV, 1eV = 1.6x10^-19). (a) What is the Cutoff frequency for the calcium metal? Write the result in terms of 1014Hz. Keep 3 decimal places. Enter a number x1024Hz Submit (5 attempts remaining)...
Question 10 Statistical thermodynamics may be used to find the radiation pressure P for cavity (or...
Question 10 Statistical thermodynamics may be used to find the radiation pressure P for cavity (or black body) radiation in terms of the energy per unit volume u. (a) An ideal quantum gas comprises non-interacting identical particles with discrete quantum states labelled 1, 2, ...,r ,....The partition function is given by Z (T,V,N)- > exp(-B(n,&, + п,&, +...)} пп. (i) Define the symbols n1, n2,...,n,...and 81, 82, ..., Er,... (iiExplain why, for photons, the partition function may be expressed as:...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a)...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Chapter 6 Homework For math related questions show all of your work and use the correct...
Chapter 6 Homework For math related questions show all of your work and use the correct Answer each question completely. number of significant figures. Anx-ray has a wavelength of 0.13 nm. Calculate the frequency for this wavelength. Calculate the 1. energy (in J) of one photon of this radiation. Calculate the energy in 1 mole of photons. 2. Which of these electron transitions correspond to absorption of energy and which to emission? Which would have the smallest absorption of energy?...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
(100pts) For full credit show ALL work. The variational method is commonly used in various guises...
(100pts) For full credit show ALL work. The variational method is commonly used in various guises in physics to determine the quantum ground states of solids. One of the properties of ground states is that they are local minima with respect to some parameter (in this case μ ) thus they are the "lowest energy state" one can obtain as a function of this parameter. Consider a "hydrogen like" atom. Assume the electron is n the (r)-Be-u state, where B...
9. An n- type germanium semiconductor sample is brought into contact with a p - type...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
2. A digital optical fiber link employing ideal binary signaling at a rate of 50 Mbps operates at a wavelength of 1.3 um. The detector is a germanium photodiode which has a quantum efficiency of 45% at this wavelength. An alarm is activated at the receiver when the bit error rate drops below 10. Calculate the theoretical minimum optical power required at the photodiode in order to keep the alarm inactivated. Comment briefly on the reasons why in practice the...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency of 60 % at a wavelength of 0.9 um The dark current is 3 nA and load resistance is 4 Kn. The incident optical power is 200 nw and the receiver bandwidth is 5 MHz. Determine 1) Mean square quantum noise current, 2) Mean square dark current and 3) Mean square thermal nosie current at a temperature of 20 °C [8]
Q.14 a) i...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
Quantum Physics - Photoelectric Effect 1 Light Light2 Photo- electrons KEL KEN-W Photoelectric Effect Lenard found that light has to be above a certain frequency in order to observe photoelectrons The Planck constant is 6.626x10^-34 J s. The calcium metal has a work function WO = 2.71 eV, 1eV = 1.6x10^-19). (a) What is the Cutoff frequency for the calcium metal? Write the result in terms of 1014Hz. Keep 3 decimal places. Enter a number x1024Hz Submit (5 attempts remaining)...
Question 10 Statistical thermodynamics may be used to find the radiation pressure P for cavity (or black body) radiation in terms of the energy per unit volume u. (a) An ideal quantum gas comprises non-interacting identical particles with discrete quantum states labelled 1, 2, ...,r ,....The partition function is given by Z (T,V,N)- > exp(-B(n,&, + п,&, +...)} пп. (i) Define the symbols n1, n2,...,n,...and 81, 82, ..., Er,... (iiExplain why, for photons, the partition function may be expressed as:...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Chapter 6 Homework For math related questions show all of your work and use the correct Answer each question completely. number of significant figures. Anx-ray has a wavelength of 0.13 nm. Calculate the frequency for this wavelength. Calculate the 1. energy (in J) of one photon of this radiation. Calculate the energy in 1 mole of photons. 2. Which of these electron transitions correspond to absorption of energy and which to emission? Which would have the smallest absorption of energy?...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
(100pts) For full credit show ALL work. The variational method is commonly used in various guises in physics to determine the quantum ground states of solids. One of the properties of ground states is that they are local minima with respect to some parameter (in this case μ ) thus they are the "lowest energy state" one can obtain as a function of this parameter. Consider a "hydrogen like" atom. Assume the electron is n the (r)-Be-u state, where B...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
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