Question

1) Two pnp BJTs are identical except that the emitter and collector region doping are interchanged, as illustrated below. 1017 1017 101s 10 1014 04 E B C ??? Transistor A Transistor B a) Which transistor is expected to have the greater emitter efficiency? Explain. b) Which transistor will exhibit the greater sensitivity to base width modulation under active mode biasing? Explain. If limited by avalanche breakdown of the C-B junction, which transistor will exhibit the larger VcB0? Explairn. c)

Answer 1

uhon! a) Refesto the Argne PI he ext book The expressnrfomance paee Dg NE Le greater とmettes( Effitee ne' between the two EJTs becauseanso A, dep n cenentva hon in the BJ'i emi t test i's much greateJi than deprm Concentra kbo 'n the bJ7 base Ne NB unty ep ep dep ten

ce) fan d the trans*stor, the exhibrt lasen Vcgt betaoeeo the tio B77s undes the ackue modebatng сво because VeBOİs asoun d I'der) heal to vBR of the collector- base sune her). Df the BJT e's yt e s tıíc tedby ova urns ja edy orVo lanche breakdooo VpR prepoxtenal to the dep n en e (ausa Ily n verSe T transtor A, the collecom ts the besser doped 14 D hanststor 8, the base ha, the ighte deptu (0 At's less than NBof tr ansts bor B, so the tvon5%for A es display the