Question

DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the peak repetitive reverse voltage. b) Determine the maximum Van and typical reverse current I at room temperature. 2. Determine the current Io in Figure 1(a) ifE-10 V 3. Determine the current Io in Figure 1(b) if E- 10 V / 4. Determine the dc resistance RD of ap-n junction diode at ID리 mA and 10 mA. 5. Determine the small-signal resistance r of a p-n junction diode at Io-1 and 10 mA. 470 Ω 470 Ω Ip Ip IN4001 VD Figure 1(a): Diode bias circuit. Figure 1(b): LED bias circuit. Procedure: To test a diode, measure the DC forward resistance and DC reverse resistance. A good diode will have a low forward resistance and a very large reverse resistance. The ratio of the reverse to forward resistance should be at least 1000:1. Measure and record the forward and reverse resistances. This measurement is done without any external voltage applied to the diode (except the battery inside the meter) Forward resistance Rov Reverse resistance RoR

Answer 1

1.

Peak repetiive reverse voltage = 50V

maximum current carrying capacity = 1A ( it withstand peaks up to 30A )

2.

Maximum Full−Cycle Average Forward Voltage Drop V_F(AV)= 0.8v

Typical Reverse Current (TJ = 25°C) =0.05 uA

3.

Typical forward drop = 0.93V

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