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Capture 2.JPGCapture 3.JPGCapture.JPGpart 1 and 2 - for part 2 all journal entries needed
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explain what optoelectronics based gas sensor is and how graphene can be fabricated into the active devices to engineer the effective optical properties.
Optoelectronics and Photonics: Principles and
Practices 2nd edition Chapter 1.19
1.19 Dielectrie mirror and AlAs with nr = 2.912, both around i 500 nm. The GaAs-AlAs dielectric mirror is inside a vertical cavity surface emitting laser diode operating at 1.5 μ. The substrate is GaAs with n.-n, n"-3382. The light is incident on the mirror from another semiconductor that is GaAlAs with an index nn 3.40. Calculate how many pairs of layers N would be needed to get a reflectance...
2.7 Optoelectronics and Photonics
2.7 Consider a dielectric slab waveguide that has a thin GaAs layer of thickness 0.2 μm Dielectric slab waveguide between two AlGaAs layers. The refractive index of GaAs is 3.66 and that of the AlGaAs layers is 3.40. What is the cutoff wavelength beyond which only a single mode can propagate in the waveguide, assuming that the refractive index does not vary greatly with the wavelength? If a radiation of wavelength 870 nm (corresponding to bandgap...