Question

Carbon and oxygen combine to form the molecular compound CO2CO2, while silicon and oxygen combine to form a covalent network solid with the formula unit SiO2SiO2. Explain the difference in bonding between the two group 4A elements and oxygen.

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital with an oxygen  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital and a silicon  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital. But because the Si−OSi−O bond distance is  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

than the C−OC−O distance and a  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital is larger than a  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbital, overlap between the silicon and oxygen  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two blank bonds to two oxygens in a molecular structure.

orbitals is not as favorable. As a result, silicon forms four  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon ( ) orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen ( ) orbital and a silicon blank orbital. But because the S i − O bond distance is ( ) than the C − O distance and a ( ) orbital is larger than a ( ) orbital, overlap between the silicon and oxygen( ) orbitals is not as favorable. As a result, silicon forms four ( ) bonds to four oxygens in a covalent network structure rather than two ( ) bonds to two oxygens in a molecular structure.bonds to four oxygens in a covalent network structure rather than two  

The difference in properties between C O 2 and S i O 2 is due primarily to the difference in electronic structure between carbon and silicon. The p part of a carbon-oxygen double bond is formed by sideways overlap of a carbon blank orbital with an oxygen blank orbital. If a similar silicon-oxygen double bond were to form, it would require overlap of an oxygen blank orbital and a silicon blank orbital. But because the S i − O bond distance is blank than the C − O distance and a blank orbital is larger than a blank orbital, overlap between the silicon and oxygen blank orbitals is not as favorable. As a result, silicon forms four blank bonds to four oxygens in a covalent network structure rather than two ( ) bonds to two oxygens in a molecular structure.

fill ins

2p

2s

p

single

3p

3s

longer

shorter

s

double