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A 0.6-μm-thick layer of a particular photoresist has D,-40 mJ/cm2 and D100- (a) Calculate the resist contrast. (b) Calculate the CMTF. (c) It is found if the resist thickness is cut in half, D100 reduces to 70 mJ/cm2 while Do is 2. 85 mJ/cm2. unchanged. What is the higher contrast possible in this resist without changing the resist processing?A o.sum-tkick layY of a partiolar phrtsma kas p. 4om3/c_ and汾 ca) Calculate eyesat lotrast b allate t eMTE

engineering   Electrical-Engineering   
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0 2. Amscoers D1oo Do -l 8S o40 cozite the equatiơ) to bind eMTF 1 0 oS47l2S 3.125 wote the equatin) tot nd highest Tesist oaDo -1 -1 40 二41145

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