An oxidized silicon (100) wafer has an initial field oxide thickness of d0. Dry oxidation at...
An oxidized silicon (100) wafer has an initial field oxide thickness of d0. Dry oxidation at 1000 ̊C is then used to grow a thin film gate of 1000 Å in 1.7 hrs. Calculate the original field oxide thickness d0?
Homework Answers
One needs to take the help of growth curves(shown) above to answer this curve.From the “1000oC dry” curve in above figure, in 1.7 hrs one can grow of oxide around 880 Ao.
So, original field oxide thickness d0 = 1000-880 = 120 Ao
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