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Describe MOSFIT switching Mechanism, types, characteristics, Applications with neat diagrams. You can collect the details from...

Describe MOSFIT switching Mechanism, types, characteristics, Applications with neat diagrams. You can collect the details from the Internet.
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MOSFET stands for Metal-oxide-semiconductor field-effect transistor. It is a field-effect transistor (FET with an insulated gate) where the voltage at gate determines its conductivity. It is a voltage controlled device and requires only a small input current.

TYPES AND SWITCHING MECHANISM

Two types of MOSFETs are (1) depletion MOSFETs and (2) enhancements MOSFETs

An n-channel depletion-type MOSFET is formed on a p-type silicone substrate as shown in the figure, with two heavily doped n+ silicon for very low resistance connections. The gate is isolated n channel by a thin layer of of oxide. The substrate is normally connected to the source and so it is three terminal device i.e., source, gate and drain. If gate-to-source voltage is negative, some of the electrons in the n-channel area are repelled and a depletion region is created below the oxide layer. This results in a narrower effective channel and a high resistance from the drain to source. If the gate-to-source voltage is made high enough (called pinch-off voltage),the channel becomes completely depleted and so no current flows from the drain to source.

An n-channel enhancement-type MOSFET has no physical channel, as shown in the diagram. If gate-to-source voltage is positive, an induced voltage attracts the electrons from the p-substrate and accumulate them at the surface beneath the oxide layer. If gate-to source voltage is greater than or equal to a value known as threshold voltage (VT), a sufficient number of electrons are accumulated to form a virtual n-channel and the current flows from the drain to source.

CHARACTERISTICS: There are two type of characteristics of MOSFETs - transfer characteristics and output characteristics as shown below. The transconductance, which is the ratio of drain current to gate voltage, defines the transfer characteristics. This is a very important parameter.

There are three regions of operation as shown in the output characteristics.

1. cutoff region (VGS less than or equal to VT)

2. pinch-off or saturation region ( VDS is more than or equal to VGS - VT). In this region, the drain current remains almost constant for any increase in the value of drain-to-source voltage and the MOSFETs are used in this region for voltage amplification.

3. linear region ( VDS is less than or equal to VGS - VT). In this region, the drain current varies in proportion to the drain-source voltage.

The pinch-off occurs at VDS = VGS - VT

APPLICATIONS

1. AMPLIFIER: It is excellent for amplifier applications because it has very high input impedance and requires almost no input current to control the load current.

2. SWITCHING: It can be used for switching applications because its switching speed is very high and switching timings are of the order of nanoseconds.  

For the depletion-type MOSFETs. the gate voltage can be either positive or negative. However, the enhancement-type MOSFETs respond to a positive gate voltage only. The power MOSFETs are generally of the enhancement type.

Similarly, there are p-channel depletion-type and enhancement-type MOSFETs.

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