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4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities and fast re

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Given that E lectote fteld E 10 v/em 1000 V /m Electron moblWer μη-8500 cm/Vs Temperature T 300K e te lattory between datft s

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VdM RE 8500 x 10850 m/s 6 Vth = 3KBT 3X:38x10-23X300 9.10X10 31 m = 1.168x109 m/s PA YAN 850 1168 X10 -3 - 7.277x10 5 0.7217

> Isn't a in cm and not m? The answer for b is then also off.

didntrealizenamewasusername Mon, May 3, 2021 11:19 AM

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