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Which will cause more crystalline damage for P implantation into Si, if the implantation is carried...

Which will cause more crystalline damage for P implantation into Si, if the implantation is carried out at 100keV, or at 200keV? Give a rationale.Hint: think about stopping mechanisms

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GNen that ab damageiotoS:| 17 | 140 rフ ectro Energy)

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