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1. Given an ideal p-n Si diode such that the thickness of quasi-neutral regions on both...

1. Given an ideal p-n Si diode such that the thickness of quasi-neutral regions on both sides of the junction, D, is such that D<<Lp or Ln. Assume NA=ND, Dp=DN and under forward bias minority carriers that travel farther than D on either side of the junction have a lifetime of 0, find the numerical value of JN/Jp under forward bias. Briefly explain how you arrive at your answer. (Hint: know your boundary conditions)
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