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For a process that involves using a plasma to treat an oxide-covered wafer, would the process...

For a process that involves using a plasma to treat an oxide-covered wafer, would the process be better served using an AC or DC plasma?

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process involving plasma to treat an oxide covered for the process would be better served using DC plasma because in DC plasma in DC plasma when we do oxide covered buffer Ayan deposited on the buffer and covered the oxide and after that person takes place DC plasma generated and realise in the way when a gas placed between two electrodes get ionized and hence the ions produced over there to buffer the surface and DC plasma is better.

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