Question

1. Consider an NMOS transistor with the gate connected to a voltage source, its source connected to ground, bulk also connected to ground and the drain connected a variable voltage source. The NMOS transistor properties are k’ = 0.2mA/V2, ?= 0.025 V-1, W= 16?? and L = 1?? , V_to= 0.8V and gate oxide thickness of t_ox = 100Å.
   1. Assuming the transistor in saturation region and ignoring any Early effects, calculate the gate current, the gate source voltage and the gate source overdrive voltage, V_x, in order to have a 1mA drain current.
2. 2. What is the minimum drain voltage to keep the transistor in the saturation region at 1mA drain current?
3. 3. Repeat a) and b) above for 10uA drain current
   4. For the gate source overdrive voltage calculated at a) and c), sketch the I_D = f(V_DS) for the following drain source voltages: 10mV, 50mV, 5V and 10V. Any comments about the plots are a bonus.
   5. Calculate the transition frequency for a gate source overdrive as calculated in c) and V_DS = 5V. Ignore capacitance to bulk. Note that oxide relative permittivity is 3.9 .

Answer 1